EXTRAORDINARY MAGNETORESISTANCE OF LASERANNEALED NANO BORON DEPOSITEDON OXIDIZED POROUS SILICON
نویسندگان
چکیده
This study explores the impact of laser annealing on electrical and magnetic properties nano boron deposited oxidized porous silicon (n-B/PSiO2) its potential for spintronic applications. The Nd: YAG was used at varying energies to anneal n-B thin films. Increasing energy increased grain size more ordered structures. It also surface roughness due forming new boundaries secondary phases. material were affected by annealing, with an increase in forward reverse current resistivity temperature. found that magnetoresistance increasing temperature, attributed tunnel injection through dioxide layer, could be up 7 times higher than non-annealed n-B/PSiO2in a field. highlights importance controlling materials’ structure their physical properties. In addition, it provides insights into electronic n-B/PSiO2and behavior charge carriers
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ژورنال
عنوان ژورنال: Eurasian physical technical journal
سال: 2023
ISSN: ['1811-1165', '2413-2179']
DOI: https://doi.org/10.31489/2023no2/20-31